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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 1/5 BTC4081S3S Description * The BTC4081S3S is designed for using in driver stage of AF amplifier and general purpose amplification. * Low Cob, Typ. Cob=2.0pF * Complementary to BTA1576S3S * Pb-free package Symbol BTC4081S3S Outline SOT-323 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 50 7 150 225 150 -55~+150 Unit V V V mA mW C C BTC4081S3S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 180 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 560 3.5 Unit V V V A A V MHz pF Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 2/5 Test Conditions IC=100A IC=1mA IE=50A VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range R 180-390 S 270-560 Ordering Information Device BTC4081S3S Package SOT-323 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 1F BTC4081S3S CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=6V Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 3/5 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 Current Gain---HFE 100 10 0.1 1 10 100 Collector Current --- IC(mA) 1000 Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Cutoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 Collector Current --- IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta( ) BTC4081S3S CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 4/5 Carrier Tape Dimension BTC4081S3S CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C202S3S Issued Date : 2002.05.11 Revised Date : 2006.08.17 Page No. : 5/5 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 1F E A Z He 0 1 scale 2 mm 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4081S3S CYStek Product Specification |
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